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inchange semiconductor isc product specification isc silicon npn power transistor 2SD1437 description collector-emitter breakdown voltage :v (br)ceo = 60v(min) complement to type 2sb1033 low collector saturation voltage applications designed for low frequency power amplification. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1437 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ; i b = 0 60 v v (br)cbo collector-base breakdown voltage i c = 0.1ma ; i e = 0 80 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma ; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 1.0 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.2a b 1.5 v i cbo collector cutoff current v cb = 60v ; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe dc current gain i c = 1a ; v ce = 5v 60 320 f t current-gain?bandwidth product i c = 0.5a ; v ce = 5v 8 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 90 pf ? h fe classifications d e f 60-120 100-200 160-320 isc website www.iscsemi.cn 2 |
Price & Availability of 2SD1437 |
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